PART |
Description |
Maker |
DSCC93026 |
DSCC 93026 SuperTan Wet Tantalum Capacitors DSCC 93026 SuperTan? Wet Tantalum Capacitors
|
Vishay Siliconix
|
KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic Samsung semiconductor
|
KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional 1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional /-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱,计划生育与辫子劳工处 1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱,计划生育与辫子劳工处 /-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱,计划生育与辫子劳工处
|
Optoway Technology Inc. Optoway Technology, Inc.
|
KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
SE051C106KAR SE035C475KAR SE043C106KAR |
Extended Commercial Radial Range
|
AVX Corporation
|
08-130150-01 08-130150-01-A1 |
OUTLINE EXTENDED PFC MINI 1/RU
|
VICOR[Vicor Corporation]
|
85814-101LF |
FEMALE KEY HALF, EXTENDED
|
FCI connector
|
HY514264B |
256K x 16 Extended Data Out Mode
|
Hynix Semiconductor
|